SiGe-on-insulator substrate fabricated by low energy oxygen implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 43-48

  Ishikawa, Yukari ^a   Saito, T ^a   Shibata, N ^a   Fukatsu, S ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Germanium; Semiconductor on insulator; Silicon; Silicon compounds; SIMOX

Indexed keywords

NANOSTRUCTURED MATERIALS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

LOW ENERGY OXYGEN IMPLANTATION; SEPARATION BY IMPLANTED OXYGEN TECHNIQUE;

ION IMPLANTATION;

EID: 0032715933     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00590-4     Document Type: Article

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