Diffusion of gold in 3C-SiC epitaxially grown on Si Structural characterization

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 186-189

  Kornilios, N ^a   Constantinidis, G ^a   Kayiambaki, M ^a   Zekentes, K ^a   Stoemenos, J ^a,b  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Gold film; Silicon carbide; Transmission electron microscopy

Indexed keywords

AGING OF MATERIALS; ANNEALING; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); METALLIC FILMS; SEMICONDUCTING SILICON; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE RELAXATION;

GOLD;

EID: 0043228213     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01960-5     Document Type: Article

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