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Volumn 201, Issue , 1999, Pages 260-262

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

(9) Chaldyshev, V V a Faleev, N N a Bert, N A a Musikhin, Yu G a Kunitsyn, A E a Preobrazhenskii, V V b Putyato, M A b Semyagin, B R b Werner, P c

a IOFFE INSTITUTE (Russian Federation)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ANTISITE DEFECTS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR GROWTH;

EID: 0032688626 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01335-9 Document Type: Article

Times cited : (5)

References (9)

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