Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 51-54

  Bert, N A ^a   Chaldyshev, V V ^a   Faleev, N N ^a   Kunitsyn, A E ^a   Lubyshev, D I ^b   Preobrazhenskii, V V ^b   Semyagin, B R ^b   Tret'yakov, V V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PRECIPITATION (CHEMICAL); SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING;

INDIUM DELTA DOPING; UNDOPED FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030672249     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/010     Document Type: Article

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