High performance δ-modulation-doped Si/SiGe heterostructure FET's grown by MBE

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1313-1316

  Wu, San Lein ^a   Chang, Shoou Jinn ^b  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING BORON; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

DRAIN BREAKDOWN VOLTAGE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; PARALLEL CONDUCTION EFFECT; SILICON BASED DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 0032687163     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00063-5     Document Type: Article

References (9)

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