Properties of InN films prepared by magnetron sputtering

Shinku/Journal of the Vacuum Society of Japan

Volumn 42, Issue 3, 1999, Pages 272-274

  Saito, Nobuo ^a   Igasaki, Yasuhiro ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; MAGNETRON SPUTTERING; NITROGEN; OPTICAL PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS;

HALL MOBILITY; INDIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032685775     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.42.272     Document Type: Article

References (8)

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