Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regia

Electronics Letters

Volumn 35, Issue 19, 1999, Pages 1676-1678

  Kim, Jong Kyu ^a,b   Lee, Jong Lam ^a   Lee Won, Jae ^a   Park, Yong Jo ^a   Kim, Taeil ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE TREATMENT;

AQUA REGIA; GALLIUM NITRIDE; WORK FUNCTION;

OHMIC CONTACTS;

EID: 0032685336     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991099     Document Type: Article

References (4)

1. NAKAMURA, S., SENOH, M., IWASA, N., and NAGAHAMA, S.: 'High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes', Appl. Phys. Lett., 1995, 67, pp. 1868-1870
2. MORI, T., KOZAWA, T., OHWAKI, T., YAGA, Y., NAGAI, S., YAMASAKI, S., ASAMI, S., SHIBATA, N., and KOIKE, M.: 'Schottky barriers and contact resistances on p-type GaN', Appl. Phys. Lett., 1996, 69, pp. 3537-3539
3. 2Sx-treated GaAs observed by slow positrons', Appl. Phys. Lett., 1991, 58, pp. 1167-1169
4. KIM, J.K., LEE, J.-L., LEE, J.W., SHIN, H.E., PARK, Y.J., and KIM, T.: 'Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment', Appl. Phys. Lett., 1998, 73, pp. 2953-2955