Analysis of In0.52Al0.48As/In0.53Ga0.47As/InP quantum wire MODFETs employing coupled well channels

Solid-State Electronics

Volumn 43, Issue 5, 1999, Pages 901-914

  Heller, E K ^a   Islam, S K ^b   Zhao, G ^a   Jain, F C ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b UNIVERSITY OF NORTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032681850     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00003-9     Document Type: Article

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