Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes

International Journal of Electronics

Volumn 86, Issue 9, 1999, Pages 1039-1050

  Rao, Rapeta V V V Jagannadha ^b   Chong, T C ^a   Tan, L S ^a   Lau, W S ^a   Lim, N ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CENTRE FOR WIRELESS COMMUNICATIONS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

MISFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

TRANSIENT CURRENT SPECTROSCOPY (TCS);

SEMICONDUCTOR DIODES;

EID: 0032680951     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072199132824     Document Type: Article

References (21)

1. Dmowski, K, and Bethge, K, 1991, Current deep-level transient spectroscopy in MOS structures with a boxcar integrator and an arbitrary gate-width-data analysis. Review of Scientific Instruments, 62, 1037-1046.
2. Golio, J. MI, Miller, ML G, Maracas, G N, and Johnson, D A., 1990, Frequency-dependent electrical characteristics of GaAs MESFETs. IEEE Transactions on Electron Devices, 37, 1217-1227.
3. Graffeuil, J., Hadjoub, Z., Fortea, J. P, and Pouysegur, ML, 1986, Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterization Solid-State Electronics, 29, 1087-1097.
4. Ibbetson, J. P, Yin, L-W, Hashemi, Mi, Gossard, A. C., and Mishra, U K, 1992, Study of transport through low-temperature GaAs surface insulator layers, Material Research Society Symposium Proceedings, 241, 187-189.
5. Lau, W S, Chong, TC., Tan, L. S, Goo, C. H, and Goh, K S., 1991, The characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimulated current technique. Japanese Journal of Applied Physics, 30, L1843-L1846.
6. Lau, W S, Goo, C. H, Chong, TC, and Chu, P K, 1993, Quantitative detection of oxygen related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature, Japanese Journal of Applied Physics, Part 2, 32, L1192-L1195.
7. Lin, T-G, and Okumura, T, 1996, Characterization of annealed low-temperature GaAs layers grown by molecular beam epitaxy with n-i-n structure. Japanese Journal of Applied Physics, Part 1, 35, 1630-1636.
8. Liu, X., Prasad, A, Chen, W M, Kurpiewski, A, Stoschek, A, Liliental-Weber, Z., and Weber, E. R., 1994, Mechanism responsible for the semi-insulating properties of low-temperature grown GaAS. Applied Physics Letters, 65, 3002-3004.
9. Look, D. G, 1990, Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: hopping in a dense EL2-like band. Physical Review B, 42, 3578-3581.
10. Mahalingam, K, Otsuka Nl, Melloch, M R., Woodall, J. ML, and Warren, A. G, 1991, Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs. Journal of Vacuum Science and Technology B, 9, 2328-2332.
11. Mahalingam, K, Otsuka, N, Melloch, M R., Woodall, J. M, and WArren, A. G, 1992a, Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 10, 812-814.
12. Mahalingam, K, Otsuka, N, Melloch, M R., and Woodall, J. M, 1992b, Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures, Applied Physics Letters, 60, 3253-3255.
13. Melloch, M R., Chang, C. L, Otsuka, N, Mahalingam, K, Woodall, J. M, and Kirchner, P. D, 1993, Two-dimensional arsenic-precipitate structures in GaAs. Journal of Crystal Growth, 127, 499-502.
14. Melloch, M R., and Woodall, J. M, 1995, Comment on mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs. Applied Physics Letters, 67, 1331-1332.
15. Ohbu, I., Takahama, M, and Imamura, Y, 1992, Diffusion of gallium vacancies from low-temperature-grown GaAs. Japanese Journal of Applied Physics, Part 2, 31, L1647-L1649.
16. Shur, M, 1990, Physics of Semiconductor Devices (Englewood Cliffs, NJ: Prentice Hall).
17. Verma, A K, Tu, J., Smith, J. S, Fujioka, H, and WEber, E. R., 1993, Electrical characteristics of lowtemperature-Al0.3Ga0.7As. Journal of Electronic Materials, 22, 1417-1420.
18. Warren, A C., Woodall, J. M, Freeouf, J. L., Grischkowsky, D, Mointurff, D. T, Melloch, M R., and Otsuka, N, 1990, Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy. Applied Physics Letters, 57, 1331-1333.
19. Warren, A. C, Woodall, J. M, Kirohner, P D, Yin, X, Pollak, F., Melloch, M R., Orsuka, N, and Mahalingam, K, 1992, Role of excess As in low-temperature-grown GaAs. Physical Review B, 46, 4617-4620.
20. Wessels, B W, 1976, Determination of deep levels in Cu-doped GaP using transient current spectroscopy. Journal of Applied Physics, 47, 1131-1133.
21. Yin, L-W, Hwang, Y, Tee, J. H, Kolbas, R. M, Trew, R J., and Mishra, U K, 1990, Improved breakdown voltage in GaAs MESFET’s utilizing surface layers of GaAs grown at a low temperature by MBE. IEEE Electron Device Letters, 11, 561-563.