400-mW single-frequency 660-nm semiconductor laser

IEEE Photonics Technology Letters

Volumn 11, Issue 7, 1999, Pages 791-793

  Pezeshki, B ^a   Hagberg, M ^a   Zelinski, M ^a   DeMars, S D ^a   Kolev, E ^a   Lang, R J ^a  

^a SDL INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; DISTRIBUTED FEEDBACK LASERS; LASER MODES; OPTICAL FIBER COUPLING; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE MODE FIBERS;

SEMICONDUCTOR WAVEGUIDES; SINGLE MODE FIBER COUPLING;

SEMICONDUCTOR LASERS;

EID: 0032680404     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.769709     Document Type: Article

References (7)

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2. H.-P. Gauggel, C. Geng, H. Schweizer, F. Barth, J. Hommel, R. Winterhoff, and F. Scholz," Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature," Electron. Lett., vol. 31, pp. 367-368, 1995.
3. H.-P. Gauggel, J. Kuhn, C. Jerichow, C. Geng, F. Scholz, and H. Schweizer, "Low threshold CW operation of GaInP/AlGaInP DFB lasers at 680 nm," Electron. Lett., vol. 33, pp. 1385-1386, 1997.
4. B. Pezeshki, J. S. Osinski, H. Zhao, A. Mathur, and T. L. Koch, "GaInP/AlGaInP 670 nm singlemode DBR laser," Electron. Lett., vol. 32, pp. 2241-2243, 1996.
5. B. Pezeshki, M. Zelinski, H. Zhao, and V. Agrawal, "40 mW 650 nm distributed feedback lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 36-38, 1998.
6. B. Pezeshki, J. S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, "660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier," Electron. Lett., vol. 33, pp. 1314-1315, 1997.
7. V. V. Wong, S. D. DeMars, A. Schoenfelder, and R. Lang, "Angled-grating distributed-feedback laser with 1.2 W CW single-mode diffraction limited output at 1.06 μm," in CLEO '98, Tech. Dig., 1998, pp. 34-35.