660nm 250mW GaInP/AlInP monolithically integrated master oscillator power amplifier

Electronics Letters

Volumn 33, Issue 15, 1997, Pages 1314-1315

  Pezeshki, B ^a   Osinski, J S ^a   Zelinski, M ^a   O'Brien, S ^a   Mathur, A ^a  

^a SDL INC   (United States)

Author keywords

Power amplifiers; Semiconductor junction lasers

Indexed keywords

NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS;

DISTRIBUTED BRAGG REFLECTOR;

POWER AMPLIFIERS;

EID: 0031187637     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970892     Document Type: Article

References (5)

1. GAUGGEL, H.-P., GENG, C., SCHWEIZER, H., BARTH, F., HOMMEL, J., WINTERHOFF, R., and SCHOLZ, F.: 'Fabrication and operation of first-order GalnP/AlGalnP DFB lasers at room temperature', Electron. Lett., 1995, 31, (5), pp. 367-368
2. GAUGGEL, H.-P., ARTMANN, H., GENG, C., SCHOLZ, F., and SCHWEIZER, H.: 'Wide-range tunability of GalnP-AIGalnP DFB lasers with superstructure gratings', IEEE Photonics Technol. Lett., 1997, 9, pp. 14-16
3. PEZESHKI, B., OSINSKI, J.S., ZHAO, H., MATHUR, A., and KOCH, T.L.: 'GaInP/AlGaInP 670nm singlemode DBR laser', Electron. Lett., 1996, 32, pp. 2241-2243
4. O'BRIEN, S., WELCH, D.E., PARKE, R., MEHUYS, D., DZURKO, K., LANG, R., WAARTS, R., and SCIFRES, D.: Operating characteristics of a high power monolithically integrated flared amplifier master oscillator power amplifier', IEEE J. Quantum Electron., 1993, 29, pp. 2052-2057
5. O'BRIEN, S., LANG, R., PARKE, R., MAJOR, J., WELCH, D.F., and MEHUYS, D.: '2.2-W continuous-wave diffraction limited monolithically integrated master oscillator power amplifier at 854nm', IEEE Photonics Technol. Lett., 1997, 9, pp. 440-442