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Volumn 15, Issue 2, 1999, Pages 23-28

Taking a deep look at analog CMOS

(1)  Foty, Daniel a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

EID: 0032680082     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/101.755473     Document Type: Article
Times cited : (3)

References (14)
  • 2
    • 0028447782 scopus 로고
    • MOSFET technology for low voltage/low power applications
    • June
    • D. Foty and E. Nowak, "MOSFET technology for low voltage/low power applications," IEEE Micro. pp. 68-77, June 1994.
    • (1994) IEEE Micro. , pp. 68-77
    • Foty, D.1    Nowak, E.2
  • 3
    • 0016116644 scopus 로고
    • Design of ion implanted MOSFETs with very small physical dimensions
    • R. Dennard et al., "Design of ion implanted MOSFETs with very small physical dimensions," IEEE J. Sol. St. Circ., vol SC-9, pp. 256-268, 1974.
    • (1974) IEEE J. Sol. St. Circ. , vol.SC-9 , pp. 256-268
    • Dennard, R.1
  • 5
    • 0027850958 scopus 로고    scopus 로고
    • Ultimate ULSI CMOS performance
    • E. Nowak, "Ultimate ULSI CMOS performance," 1993 IEDM Tech. Dig., pp. 115-118.
    • 1993 IEDM Tech. Dig. , pp. 115-118
    • Nowak, E.1
  • 6
    • 0019049847 scopus 로고
    • Design and characteristics of the Lightly Doped Drain-Source (LDD) insulated gate field effect transistor
    • S. Ogura et al., "Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field Effect Transistor," IEEE Trans. Elec. Dev., vol. ED-27, pp. 1359-1367, 1980.
    • (1980) IEEE Trans. Elec. Dev. , vol.ED-27 , pp. 1359-1367
    • Ogura, S.1
  • 8
    • 84945713471 scopus 로고
    • Hot electron induced MOSFET degradation - Model, monitor, and improvement
    • C. Hu et al., "Hot electron induced MOSFET degradation - Model, monitor, and improvement," IEEE Trans. Elec. Dev., vol. ED-32, pp. 375-385, 1985.
    • (1985) IEEE Trans. Elec. Dev. , vol.ED-32 , pp. 375-385
    • Hu, C.1
  • 9
    • 0015330654 scopus 로고
    • Ion-implanted complementary MOS transistors in low-voltage circuits
    • R. Swanson and J. Meindl, "Ion-implanted complementary MOS transistors in low-voltage circuits," IEEE J. Sol. St. Circ., vol. SC-7, pp. 146-153, 1972.
    • (1972) IEEE J. Sol. St. Circ. , vol.SC-7 , pp. 146-153
    • Swanson, R.1    Meindl, J.2
  • 11
    • 0032116302 scopus 로고    scopus 로고
    • MOSFET modeling for circuit simulation: Where do we go from here?
    • D. Foty, "MOSFET modeling for circuit simulation: Where do we go from here?" IEEE Circuits and Devices Mag., vol. 14, no. 4, pp. 26-31, 1998.
    • (1998) IEEE Circuits and Devices Mag. , vol.14 , Issue.4 , pp. 26-31
    • Foty, D.1
  • 12
    • 0021501347 scopus 로고
    • The effect of high fields on MOS device and circuit performance
    • C. Sodini, P. Ko, and J. Moll, "The effect of high fields on MOS device and circuit performance," IEEE Trans. Elec. Dev., vol. ED-31, pp. 1386-1393, 1984.
    • (1984) IEEE Trans. Elec. Dev. , vol.ED-31 , pp. 1386-1393
    • Sodini, C.1    Ko, P.2    Moll, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.