Quantitative secondary ion mass spectrometry analysis of impurities in GaN and Al x Ga 1-x N films using molecular ions MCs + and MCs + 2

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 306-309

  Hongo, C ^a   Tomita, M ^a   Suzuki, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Aluminum; Gallium nitride; Matrix effect; Secondary ion mass spectroscopy; Sputtering; Useful yield

Indexed keywords

CRYSTAL IMPURITIES; ION BOMBARDMENT; MOLECULES; NEGATIVE IONS; POSITIVE IONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING;

ELECTRONEGATIVE IONS; GALLIUM NITRIDE; MATRIX EFFECT; MOLECULAR IONS; USEFUL YIELD;

SECONDARY ION MASS SPECTROMETRY;

EID: 0032678409     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00815-0     Document Type: Article

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