High-precision characterization of III-nitride semiconductor alloys with secondary ion mass spectrometry (SIMS)

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 363-368

  Erickson, J W ^a   Gao, Y ^a   Wilson, R G ^a  

^a CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CALIBRATION; CHARACTERIZATION; COMPOSITION; ION BOMBARDMENT; IONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; STOICHIOMETRY;

DOPANT CONCENTRATIONS; DOPANTS; NITRIDE SEMICONDUCTOR ALLOYS;

NITRIDES;

EID: 0029773009     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)