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Solid State Communications

Volumn 111, Issue 8, 1999, Pages 459-464

Stoichiometric and non-stoichiometric (101̄0) and (112̄0) surfaces in 2H-SiC: A theoretical study

(4) Rauls, E a Elsner, J a Gutierrez, R a Frauenheim, Th a

a UNIVERSITY OF PADERBORN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; HYDROGEN; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACE STRUCTURE;

DENSITY FUNCTIONAL THEORY (DFT); MICROPIPES;

SILICON CARBIDE;

EID: 0032677073 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(99)00137-4 Document Type: Article

Times cited : (77)

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