Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope

Surface Science

Volumn 429, Issue 1, 1999, Pages

  Yang, H Q ^a,b   Zhu, C X ^b   Gao, J N ^b   Xue, Z Q ^a   Pang, S J ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL BONDS; DIMERS; MOLECULAR STRUCTURE; SCANNING TUNNELING MICROSCOPY; SHRINKAGE; SILICON; SINGLE CRYSTALS;

ASYMMETRIC DIMERS; ATOMIC STRUCTURE; DOUBLE LAYER STEPS; KINK SITE; SINGLE LAYER STEPS; ULTRA HIGH VACUUM SCANNING TUNNELING MICROSCOPY;

SURFACES;

EID: 0032676663     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00408-2     Document Type: Article

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