Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 228-233

  Alperovich, V L ^a,b   Paulish, A G ^a   Scheibler, H E ^a   Tynnyi, V I ^a,b   Terekhov, A S ^a,b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CESIUM; DEPOSITION; FERMI LEVEL; MONOLAYERS; PHOTOVOLTAIC EFFECTS;

SURFACE PREPARATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030233378     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00149-3     Document Type: Article

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