SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1521-1525

Effects of the two-step growth method for GaAs grown on CaF2/Si(111) with the electron beam surface modification technique

(2) Kawasaki, Koji a Tsutsui, Kazuo a

a Tokyo Institute of Technology ^* (Japan)

Author keywords

CaF2 Si(111); Electron beam surface modification; GaAs; Growth mode; Two step growth method

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON TRANSPORT PROPERTIES; FLUORINE COMPOUNDS; MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE TREATMENT; TWINNING;

HALL MOBILITY OF ELECTRON; STICKING COEFFICIENT; SURFACE PHOTO INTERFERENCE METHOD; TWO STEP GROWTH METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032674523 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1521 Document Type: Article

Times cited : (3)

References (12)

1
- 17344382663
- H. Pietsch, A. Klust, A. Meier and J. Wollshlager: Surf. Sci. 337-339 (1997) 909.
- (1997) Surf. Sci. , vol.337-339 , pp. 909
- Pietsch, H.¹ Klust, A.² Meier, A.³ Wollshlager, J.⁴

2
- 0030235056
- B. M. Kim, C. A. Ventrice, Jr., T. Mercer, R. Overney and L. J. Schowalter: Appl. Surf. Sci. 104/195 (1996) 409.
- (1996) Appl. Surf. Sci. , vol.104-195 , pp. 409
- Kim, B.M.¹ Ventrice Jr., C.A.² Mercer, T.³ Overney, R.⁴ Schowalter, L.J.⁵

3
- 4244182871
- N. S. Sokolov, J. C. Alvarez, Y. V. Shusterman, N. L. Yakovlev, R. M. Overney, Y. Itoh, I. Takahashi and J. Harada: Appl. Surf. Sci. 104/105 (1996) 402.
- (1996) Appl. Surf. Sci. , vol.104-105 , pp. 402
- Sokolov, N.S.¹ Alvarez, J.C.² Shusterman, Y.V.³ Yakovlev, N.L.⁴ Overney, R.M.⁵ Itoh, Y.⁶ Takahashi, I.⁷ Harada, J.⁸

4
- 0001550078
- U. Hessinger, M. Leskovar and M. A. Olmstead: Phys. Rev. Lett. 75 (1995) 2380.
- (1995) Phys. Rev. Lett. , vol.75 , pp. 2380
- Hessinger, U.¹ Leskovar, M.² Olmstead, M.A.³

5
- 0000194910
- C. A. Lucas, D. Lretto and G. C. L. Wong: Phys. Rev. B 50 (1944) 14340.
- (1944) Phys. Rev. B , vol.50 , pp. 14340
- Lucas, C.A.¹ Lretto, D.² Wong, G.C.L.³

6
- 3843091759
- T. Nakayama, M. Katayama, G. Selva and M. Aono: Phys. Rev. Lett. 72 (1994) 1718.
- (1994) Phys. Rev. Lett. , vol.72 , pp. 1718
- Nakayama, T.¹ Katayama, M.² Selva, G.³ Aono, M.⁴

7
- 0028375808
- S. Ohmi, K. Tsutsui and S. Furukawa: Jpn. J. Appl. Phys. 33 (1994) 1121.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 1121
- Ohmi, S.¹ Tsutsui, K.² Furukawa, S.³

8
- 4243849768
- Ph. Avouris and R. Wolkow: Appl. Phys. Lett. 55 (1989) 1074.
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1074
- Avouris, Ph.¹ Wolkow, R.²

9
- 0028317461
- W. Li, T. Anan and L. J. Schowalter: J. Cryst. Growth 135 (1994) 78.
- (1994) J. Cryst. Growth , vol.135 , pp. 78
- Li, W.¹ Anan, T.² Schowalter, L.J.³

10
- 0024068861
- H. C. Lee, T. Asano, H. Ishiwawa and S. Furukawa: Jpn. J. Appl. Phys. 27 (1988) 1616.
- (1988) Jpn. J. Appl. Phys. , vol.27 , pp. 1616
- Lee, H.C.¹ Asano, T.² Ishiwawa, H.³ Furukawa, S.⁴

11
- 0026122387
- A. Ono, K. Tsutsui, O. Ishiyama and S. Furukawa: Jpn. J. Appl. Phys. 30 (1991) 454.
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 454
- Ono, A.¹ Tsutsui, K.² Ishiyama, O.³ Furukawa, S.⁴

12
- 0026123228
- M. Uchigoshi, K. Tsutsui and S. Furukawa: Jpn. J. Appl. Phys. 30 (1991) L444.
- (1991) Jpn. J. Appl. Phys. , vol.30
- Uchigoshi, M.¹ Tsutsui, K.² Furukawa, S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.