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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1521-1525

Effects of the two-step growth method for GaAs grown on CaF2/Si(111) with the electron beam surface modification technique

(2) Kawasaki, Koji a Tsutsui, Kazuo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

CaF2 Si(111); Electron beam surface modification; GaAs; Growth mode; Two step growth method

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON TRANSPORT PROPERTIES; FLUORINE COMPOUNDS; MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE TREATMENT; TWINNING;

HALL MOBILITY OF ELECTRON; STICKING COEFFICIENT; SURFACE PHOTO INTERFERENCE METHOD; TWO STEP GROWTH METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032674523 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1521 Document Type: Article

Times cited : (3)

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