Growth instabilities of CaF2 adlayers deposited at high temperature on Si(111)

Surface Science

Volumn 377-379, Issue , 1997, Pages 909-913

  Pietsch, H ^a   Klust, A ^a   Meier, A ^a   Wollschlager J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Atomic force microscopy; Calcium fluoride; Insulating films; Low energy electron diffraction (LEED); Semiconductor insulator interfaces; Silicon; Surface stress; Surface structure, morphology, roughness, and topography; Vicinal single crystal surfaces

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; ULTRATHIN FILMS;

CALCIUM FLUORIDE ADLAYERS; SURFACE TOPOGRAPHY; VICINAL SURFACES;

FLUORSPAR;

EID: 17344382663     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01520-8     Document Type: Article

References (14)

1. L.J. Schowalter and R.W. Fathauer, CRC Crit. Rev. Solid State Mater. Sci. 15 (1989) 367.
2. M. Watanabe, T. Suemasu, S. Muratake and M. Asade, Appl. Phy. Lett. 62 (1993) 300.
3. T. Asano, H. Ishiwara and N. Kaifu, Jpn. J. Appl. Phys. 22 (1983) 1474.
4. D. Rieger, F.J. Himpsel, U.O. Karlson, F.R. McFeely, J.F. Morar and J.A. Yarmnoff, Phys. Rev. B 34 (1986) 7295.
5. R.M. Tromp and M.C. Reuter, Phys. Rev. Lett. 61 (1988) 1756.
6. U. Hessinger, M. Leskovar and M. Olmstead, Phys. Rev. Lett. 75 (1995) 2380.
7. One triplelayer consists of three atomic layers: 1st F, 2nd Ca and 3rd F again.
8. V. Mathet, F. Nguyen-Van-Dau, J. Olivier and P. Galtier, J. Cryst. Growth 148 (1995) 133.
9. W. Li, T. Thunda, T. Anan and L.J. Schowalter, J. Vac. Sci. Technol. B 13 (1995) 2.
10. M.A. Olmstead, R.D. Bringans, R.I.G. Uhrberg and R.Z. Bachrach, Phys. Rev. B 34 (1987) 7526.
11. D. Loretto, F.M. Ross, C.A. Cucas and G.C.L. Wong, Appl. Phys. Lett. 65 (1994) 1766.
12. S. Blunier, H. Zogg, C. Maissen and A.N. Tiwari, Phys. Rev. Lett. 68 (1992) 3599.
13. J.D. Denlinger and E. Rotenberg, Phys. Rev. B 51 (1995) 8.
14. 2 are rotated by 180° with respect to the orientations of Si(111). In this paper all crystallographic orientations are given with respect to the Si(111) substrate.