Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wells

Semiconductor Science and Technology

Volumn 14, Issue 3, 1999, Pages 215-221

  Hyland, J T ^a   Kennedy, G T ^a   Miller, A ^a   Button, Chris C ^b  

^a UNIVERSITY OF ST ANDREWS   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; LASER PULSES; NONLINEAR OPTICS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; ULTRAFAST PHENOMENA;

ALL OPTICAL POLARIZATION SWITCHING; ELECTRON SPIN RELAXATION; NONLINEAR REFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032673489     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/3/002     Document Type: Article

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