Bandwidth enhancement for p-end-illuminated InP/InGaAs/InP p-i-n photodiodes by utilizing symmetrical doping profiles

Journal of Lightwave Technology

Volumn 17, Issue 5, 1999, Pages 912-917

  Ho, Chong Long ^a   Wu, Meng Chyi ^a   Ho, Wen Jeng ^b   Liaw, Jy Wang ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRON ABSORPTION; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

ASYMMETRICAL PHOTODIODE; DIFFUSION DEPTH CONTROL; HETEROINTERFACE EFFECTS; SYMMETRICAL PHOTODIODE;

PHOTODIODES;

EID: 0032673314     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.762911     Document Type: Article

References (19)

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