Study of surface treatment of silicon wafer using small angle incident X-ray photoelectron spectroscopy

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2235-2238

  Mayusumi, Masanori ^a   Imai, Masato ^a   Takahashi, Junzo ^b,c   Kawada, Kazuhiko ^b,d   Ohmi, Tadahiro ^b  

^a Super Silicon Crystal Research Inst Corp   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOYO UNIVERSITY   (Japan)

^d Japan Organo Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; FILMS; OXYGEN; SILICA; SILICON; SURFACE CLEANING; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH SENSITIVITY ANALYSIS; ULTRA CLEAN TECHNOLOGY;

SILICON WAFERS;

EID: 0032672729     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391920     Document Type: Article

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