1.5-μm strained-layer MQW-DFB lasers with high relaxation-oscillation frequency and low-chirp characteristics

IEEE Journal of Quantum Electronics

Volumn 32, Issue 7, 1996, Pages 1230-1236

  Otsuka, Nobuyuki ^a,b,c   Kito, Masahiro ^a,c,d   Ishino, Masato ^a,c,e   Matsui, Yasushi ^a,c,f,g  

^a PANASONIC CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d NAGOYA UNIVERSITY   (Japan)

^e KYOTO UNIVERSITY   (Japan)

^f OSAKA UNIVERSITY   (Japan)

^g TOHOKU UNIVERSITY

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DISTRIBUTED FEEDBACK LASERS; ELECTRIC CURRENTS; ENERGY GAP; FREQUENCY RESPONSE; LASER PULSES; LASER TUNING; MODULATION; OSCILLATIONS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

CHIRP CHARACTERISTICS; DETUNING; NEGATIVE DETUNING; OPTICAL CONFINEMENT;

QUANTUM WELL LASERS;

EID: 0030190635     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.517023     Document Type: Article

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