High energy high dose Si implantation into Ge and the effect of subsequent thermal annealing

Radiation Effects and Defects in Solids

Volumn 147, Issue 3, 1999, Pages 133-149

  Kuri, G ^a,b   Mahapatra, D P ^a   Dev, B N ^a  

^a INSTITUTE OF PHYSICS   (India)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

GeSi alloy; Implantation; Radiation damage and annealing; RBS channeling

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; ION BOMBARDMENT; ION IMPLANTATION; MATHEMATICAL MODELS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

GERMANIUM SILICON ALLOY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0032672692     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159908229004     Document Type: Article

References (36)

1. E. Kasper, H. Kibbel, H.J. Herzog and A. Gruhle, Jpn. J. Appl. Phys. 33 2415 (1994).
2. F. Sato, T. Tatsumi, T. Hashomoto and T. Tashiro, IEEE Trans. Electron Devices ED-41 1373 (1994).
3. P.W. Li, E.S. Yang, Y.F. Yang, J.O. Chu and B.S. Meyerson, IEEE Electron Device Lett. EDL-15 402 (1994).
4. S.V. Vandebroek, et al., IEEE Electron Device Lett. EDL-129 447 (1991).
5. Q.Z. Hong, J.G. Zhu, J.W. Mayer, W. Xia and S.S. Lau, J. Appl. Phys. 71 1768 (1992), and references therein.
6. K.M. Yu, I.G. Brown and S. Im, Mater. Res. Soc. Symp. Proc. 235 293 (1992).
7. R.G. Elliman, M.C. Ridgway, J.S. Williams and J.C. Bean, Appl. Phys. Lett. 55 843 (1989).
8. R.G. Elliman and W.C. Wong, Nucl. Instr. and Meth. B80/81 768 (1993).
9. W.C. Wong and R.G. Elliman, Nucl. Instr. and Meth. B106 271 (1996).
10. W.K. Chu, J.W. Mayer and M.A. Nicolet, Backscattering Spectrometry. Academic Press, New York, 1978, and references therein.
11. L.C. Feldman, J.W. Mayer and S.T. Picraux, Materials Analysis by Ion Channeling. Academic Press, New York, 1984.
12. G. Kuri, B. Sundaravel, B. Rout, D.P. Mahapatra and B.N. Dev, Nucl. Instr. and Meth. B111 234 (1996), and references therein.
13. Gerson Goldhaber and R.M. Williamson, Phys. Rev. 82 495 (1951);
14. E. Rauhala, Nucl. Instr. and Meth. B12 447 (1985).
15. J. Saarilahti and E. Rauhala, Nucl. Instr. and Meth. B64 734 (1992).
16. J.P. Biersack and L.G. Haggmark, Nucl. Instr. and Meth. 174 257 (1980). We have used the version TRIM-91.04.
17. J. Nakata, Phys. Rev. B43 14643 (1991).
18. M. Tamura, Materials Science Reports 6 141 (1991).
19. P. Parry, J. Vac. Sci. Technol. 13 622 (1976).
20. A. Grob, J.J. Grob and P. Siffert, Nucl. Instr. and Meth. B62 309 (1992).
21. A. Golanski, A. Grob, J.J. Grob, O.W. Holland, S.J. Pennycook and C.W. White, Nucl. Instr. and Meth. B62 365 (1992).
22. Sorab K. Ghandhi, VLSI Fabrication Principles. John Wiley & Sons, New York, 1994, p. 395.
23. S.S. Lau, W.F. Tseng and J.W. Mayer, Handbook on Semiconductors. North Holland, Amsterdam, 1981, Vol. 3, Chapter 7.
24. J.S. Williams and J.M. Poate, Ion Implantation and Beam Processing Academic Press, New York, 1984, p. 29.
25. L.C. Feldman and J.W. Rodgers, J. Appl. Phys. 41 3776 (1970).
26. J.H.R. dos Santos, P.L. Grande, H. Boudimov, M. Behar, R. Stoll, Chr. Klatt and S. Kalbitzer, Nucl. Instr. and Meth. B106 51 (1995).
27. L.M. Howe and M.H. Rainville, Nucl. Instr. and Meth. 182/183 143 (1981).
28. D.A. Thompson and R.S. Walker, Radiat. Eff. 36 91 (1978);
29. D.A. Thompson and R.S. Walker, Radiat. Eff. 32 135 (1977).
30. D.A. Thompson, A. Golanski, H.K. Haugen, D.V. Stefanovic, G. Carter and C.E. Cristodoulides, Radiat. Eff. 52 69 (1980).
31. P.V. Satyam, D. Bahr, S.K. Ghose, G. Kuri, B. Sundaravel, B. Rout and B.N. Dev, Current Sci. 69 526 (1995).
32. Eds. Orlando Auciello and Roger Kelly, Ion Bombardment Modification of Surfaces, Elsevier, Amsterdam, 1984, p. 42.
33. E. Rauhala, Nucl. Instr. and Meth. B12 447 (1985).
34. David C. Paine, Neal D. Evans and Ned G. Stoffel, J. Appl. Phys. 70 4278 (1991).
35. S.T. Picraux, L.R. Dawson, J.Y. Tsao, B.L. Doyle and S.R. Lee, Nucl. Instr. and Meth. B33 891 (1988).
36. L.C. Feldman, J. Bevk, B.A. Davidson, H.J. Grossmann and J.P. Mannaerts, Phys. Rev. Lett. 59 664 (1987).