Effect of partial pressure on the internal stress and the crystallographic structure of r.f. reactive sputtered Ti-N films

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 230-233

  Inoue, Shozo ^a   Ohba, Takaaki ^a   Takata, Hironori ^a   Koterazawa, Keiji ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

Resistivity; Sputtering; Stress; Titanium nitride; X ray diffraction

Indexed keywords

COMPRESSIVE STRESS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM PREPARATION; MAGNETRON SPUTTERING; SPUTTER DEPOSITION; SUBSTRATES; TITANIUM NITRIDE; X RAY CRYSTALLOGRAPHY;

PLASMA EMISSION MONITORING CONTROL SYSTEMS; REACTIVE MAGNETRON SPUTTERING;

PROTECTIVE COATINGS;

EID: 0032671886     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01632-0     Document Type: Article

References (4)

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2. S. Inoue, H. Uchida, T. Ohba, K. Koterazawa, A. Chayahara, M. Terasawa, J. Jpn. Inst. Metals 61 (1997) 1108.
3. M.F. Doerner, W.D. Nix, CRC Crit. Rev. Solid State Mater. Sci. 14 (1988) 225.
4. P. Jin, S. Maruno, Jpn. J. Appl. Phys. 30 (1991) 1463.