Dynamic process control of rf reactive sputtering by monitoring plasma emission intensity

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 61, Issue 10, 1997, Pages 1108-1114

  Inoue, Shozo ^a   Uchida, Hitoshi ^a   Ohba, Takaaki ^a,c   Koterazawa, Keiji ^a   Chayahara, Akiyoshi ^b   Terasawa, Mititaka ^a  

^a UNIVERSITY OF HYOGO   (Japan)

^b OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Composition; Dynamic control; Optical emission; Reactive sputtering; Resistivity; Titanium nitride

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; HYSTERESIS; NITROGEN; PLASMA APPLICATIONS; PRESSURE EFFECTS; PROCESS CONTROL; SPUTTER DEPOSITION; STOICHIOMETRY; TITANIUM NITRIDE;

NITROGEN PARTIAL PRESSURE; PLASMA EMISSION INTENSITY; REACTIVE SPUTTERING;

MAGNETRON SPUTTERING;

EID: 0031249174     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.61.10_1108     Document Type: Article

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