SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 9, 1999, Pages 468-471

Pulsed current anodization: An effective method for fabricating patterned porous silicon p-n junction light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

PULSED CURRENT ANODIZATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032670779 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1390873 Document Type: Article

Times cited : (8)

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