New polarization-insensitive 1.55-μm InGaAs(P)-InGaAsP multiquantum-well electroabsorption modulator using a strain-compensating layer

IEEE Journal of Quantum Electronics

Volumn 35, Issue 5, 1999, Pages 730-736

  Chung, Ku Ho ^a   Shim, Jong In ^a,b,c,d,e,f  

^a Hanyang University   (South Korea)

^b Seoul National University   (South Korea)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^e NEC CORPORATION   (Japan)

^f Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EXTINCTION; LIGHT POLARIZATION; MATHEMATICAL MODELS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

ELECTROABSORPTION MODULATORS; TENSILE STRAIN;

LIGHT MODULATORS;

EID: 0032670634     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.760319     Document Type: Article

References (16)

1. M. Suzuki, H. Tanaka, N. Edgawa, K. Utaka, and Y. Matsushima, "Transform-limited optical pulse generation up to 20 GHz repetion rate by a sinusoidally driven InGaAsP electroabsorption modulator," J. Lightwave Technol., vol. 11, pp. 468-471, Mar. 1993.
2. D. Leguen, R. Bolitin, J. Debeau, F. Devaux, M. Henry, G. Thebault, F. Favre, T. Georges, and P. Vandamme, "Demonstration of sliding filter-controlled soliton transmission at 20 Gb/s over 14 nm," Electron. Lett., vol. 34, no. 4, pp. 301-302, 1995.
3. T. Ido, M. Koizumi, S. Tanaka, M. Suzuki, and H. Inoue, "Polarization and wavelength insensitive MQW electroabsorption optical gates for WDM switching sysytems," IEEE Photon. Technol. Lett., vol. 8, pp. 788-790, June 1996.
4. F. Devaux, S. Chelles, A. Ougazzaden, A. Mircea, M. Carre, F. Huet, A. Carenco, Y. Sorel, J. F. Kerdiles, and M. Herry, "Full polarization insensitivity of a 20 Gb/s strained - MQW electroabsorption modulator," IEEE Photon. Technol. Lett., vol. 6, pp. 1203-1206, Oct. 1994.
5. K. Tada, S. Nishimura, and T. Ishikawa, "Polarization-independent optical waveguide intensity switch with parabolic quantum well," Appl. Phys. Lett., vol. 59, pp. 2778-2780, 1991.
6. M. Kato, K. Tada, and Y. Nakano, "Wide-wavelength polarization-independent optical modulator based on tensile-strained quantum well with mass-despendent width," IEEE Photon. Technol. Lett., vol. 8, pp. 785-787, June 1996.
7. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley, 1995.
8. 1 - X As grown on (100) GaAs," J. Appl. Phys., vol. 69, no. 2, pp. 812-815, 1991.
9. J. Singh, Semiconductor Optoelectronics. New York: McGraw-Hill, 1995.
10. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Electric field dependence of optical absorption near the band gap of quantum-well structures." Phys. Rev. B, vol. 32, no. 2, pp. 1043-1060, 1985.
11. G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, "Exciton binding energy in quantum wells," Phys. Rev. B, vol. 26, no. 4, pp. 1974-1979, 1982.
12. P. J. Stevens, M. Whitehead, G. Parry, and K. Woodbridge, "Computer modeling of the electric field dependent absorption spectrum of multiple quantum well material," IEEE J. Quantum Electron., vol. 24, pp. 2007-2016, Oct. 1988.
13. S. Nojima and K. Wakita, "Opimization of quantum well materials and structures for excitonic electroabsorption effects," J. Appl. Phys. Lett., vol. 53, no. 20, pp. 1958-1960, 1988.
14. 0.47As/InP quantum wells," Phys. Rev. B, vol. 42, no. 15, pp. 9587-9597, 1990.
15. M. Yamanishi and I. Suemune, "Comment on polarization dependent momentum matrix elements in quantum well lasers," Jpn. J. Appl. Phys., vol. 23, no. 1, pp. L35-L36, 1984.
16. M. E. Watson, J. L. A. Chilla, J. J. Rocca, J.-W. Kim, D. L. Lie, T. J. Vogt, and G. Y. Robinson, "Saturation intensity and time response of InGaAs-InGaP MQW optical modulators," IEEE J. Quantum Electron., vol. 31, pp. 254-260, Feb. 1995.