Laterally stacked varactor formed by ion implantation

Electronics Letters

Volumn 35, Issue 10, 1999, Pages 846-847

  Knights, A P ^a   Kelly, M J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ION IMPLANTATION; MAGNESIUM; MASKS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

MULTIJUNCTION VARACTORS;

VARACTORS;

EID: 0032669823     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990579     Document Type: Article

References (7)

1. HWU, R.J., and KAO, S.C.: 'Design consideration of monolithic milimeterwave barrier varactor diode frequency multiplier arrays', Int. J. Infrared Millimeter Waves, 1991, 12, pp. 1087-1105
2. LUNDIEN, K., MATTAUCH, R.J., ARCHER, J., and MALIK, R.: 'Hyperabrupt junction varactor diodes for millimeter-wavelength harmonic generators', IEEE Trans., 1983, MTT-31, pp. 23-238
3. KOLLBERG, E., and RYDBERG, A.: 'Quantum-barrier-varactor diodes for high-efficiencey millimeter-wave multipliers', Electron. Lett., 1989, 25, pp. 1696-1698
4. UHLIR, A.: 'The potential of semiconductor diodes in high frequency communications', Proc. IRE, 1958, 46, pp. 1099-1115
5. STAECKER, P.W., HINES, M.E., OCCHIUTI, F., and CUSHMAN, J.F.: 'Multi-Watt power generation at millimeter-wave frequencies using epitaxially-stacked varactor diodes', IEEE MTT-S Dig., 1987, pp. 917-920
6. RAO, M.V.: 'High-energy (MeV) ion implantation and its device applications in GaAs and InP', IEEE Trans., 1993, ED-40, pp. 1053-1066
7. HUTCHINSON, S., GWILLIAM, R., KELLY, M.J., SCALY, B.J., CHEW, A., and STEPHENS, J.: 'Acceptor profile control in GaAs using co-implantation of Zn and P', Nucl. Instrum. Methods B., 1999, 148, pp. 459-462