Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix

Surface and Interface Analysis

Volumn 28, Issue 1, 1999, Pages 195-199

  Jie, Y X ^a   Wu, X ^a   Huan, C H A ^a   Wee, A T S ^a   Guo, Y ^a   Zhang, T J ^a   Pan, J S ^a   Chai, J ^a   Chua, S J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; HIGH RESOLUTION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; QUARTZ; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0032669571     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199908)28:1<195::AID-SIA606>3.0.CO;2-L     Document Type: Article

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