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Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 17, Issue 1, 1998, Pages 29-30

The acceptor properties of un-intentionally doped p-type MBE-grown Hg1-xCdxTe

(5) Wei Zheng, Fang a Jian Rong, Yang a Xin Qiang, Chen a Shan Li, Wang a Li, H E a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

Annealing; HgCdTe; MBE

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HALL EFFECT; MOLECULAR BEAM EPITAXY;

ACCEPTOR PROPERTIES; MERCURY CADMIUM TELLURIDE; RESIDUAL DONOR CONCENTRATION;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0032278332 PISSN: 10019014 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (4)

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