Surface segregation behavior of Ge in comparison with B, Ga, and Sb: Calculations using a first-principles method

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 81-84

  Ushio, Jiro ^a   Nakagawa, Kiyokazu ^a   Miyao, Masanobu ^a   Maruizumi, Takuya ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; FUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; POTENTIAL ENERGY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM; SILICON WAFERS;

DENSITY FUNCTIONAL THEORY; FIRST-PRINCIPLES METHOD; SURFACE SEGREGATION;

SEMICONDUCTING GERMANIUM;

EID: 0032667046     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01290-1     Document Type: Article

References (7)

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6. Ushio J., Nakagawa K., Miyao M., Maruizumi T. Phys. Rev. B. 58:1998;3932.
7. Salahub D.R., Fournier R., Mlynarski P., Papai I., St-Amant A., Ushio J. Labanowski J., Andzelm J. Density Functional Methods in Chemistry. 1991;77 Springer, New York.