Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate

Journal of Physics D: Applied Physics

Volumn 32, Issue 14, 1999, Pages 1563-1569

  Liu, X ^a,b   Phang, J C H ^a   Chan, D S H ^a   Chim, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON IRRADIATION; INTERFACES (MATERIALS); MOS DEVICES; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS; THICK FILMS;

SILICA FILM; TEMPERATURE DEPENDENCE;

CATHODOLUMINESCENCE;

EID: 0032666758     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/14/302     Document Type: Article

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