New method for the localization of metallization defects using cathodoluminescence imaging

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 1997, Pages 264-269

  Liu, X ^a   Phang, J C H ^a   Chan, D S H ^a   Chim, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; IMAGING TECHNIQUES; LIGHT REFLECTION; METALLIZING; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON NITRIDE; SUBSTRATES;

CATHODOLUMINESCENCE IMAGING; METALLIZATION DEFECTS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0031380507     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)