SCOPUS 정보 검색 플랫폼

Volumn 568, Issue , 1999, Pages 141-146

On the influence of boron-interstitial complexes on transient enhanced diffusion

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ION IMPLANTATION; SEMICONDUCTOR DOPING;

BORON-INTERSTITIAL COMPLEXES; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING BORON;

EID: 0032664181 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-568-141 Document Type: Article

Times cited : (6)

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