V-Band Monolithic Low-Noise Amplifiers Using Ion-Implanted n+-Self-Aligned GaAs MESFET's

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 4, 1999, Pages 148-150

  Sugitani, Suehiro ^a   Tokumitsu, Masami ^a  

^a NTT CORPORATION   (Japan)

^b NIT System Electronics Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MESFET DEVICES; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIER; MONOLITHIC AMPLIFIER;

AMPLIFIERS (ELECTRONIC);

EID: 0032663386     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.763243     Document Type: Article

References (10)

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