Highly controllable electrochemical etching of InP studied by voltammetry and scanned probe microscope

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 191-194

  Kaneshiro, Chinami ^a   Sato, Taketomo ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; CYCLIC VOLTAMMETRY; ELECTROLYTES; ETCHING; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROCHEMICAL ETCHING; SCANNED PROBE MICROSCOPY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032303481     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)