Electroluminescence measurement of n+ self-aligned gate GaAs MESFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1343-1347

  Niwa, Hiroyuki ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a   Yamazaki, Hajime ^b   Taniguchi, Toru ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN RADIO CO LTD   (Japan)

Author keywords

Electroluminescence; GaAs; Impact ionization; MESFET; Recombination

Indexed keywords

EID: 0005897840     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1343     Document Type: Article

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