Raman spectroscopic analysis of structural defects in hot isostatically pressed silicon nitride

Journal of the Ceramic Society of Japan

Volumn 107, Issue 4, 1999, Pages 339-342

  Akimune, Yoshio ^a   Munakata, Fumio ^a   Matsuo, Kazuo ^a   Hirosaki, Naoto ^b   Okamoto, Yusuke ^c   Misono, Kouji ^d  

^a NISSAN MOTOR CO   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Fine Ceramics Research Association   (Japan)

^d NISSAN ARC LTD   (Japan)

Author keywords

Raman spectroscopy; Structural defect; Thermal conductivity

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; CRYSTAL WHISKERS; GRANULAR MATERIALS; HEAT TREATMENT; HOT ISOSTATIC PRESSING; PHONONS; RAMAN SPECTROSCOPY; SILICON NITRIDE; STACKING FAULTS; THERMAL CONDUCTIVITY OF SOLIDS;

STRUCTURAL DEFECTS;

CERAMIC MATERIALS;

EID: 0032661636     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.107.339     Document Type: Article

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