Study of the effects of nitrogen incorporation and annealing on the properties of hydrogenated amorphous carbon films

Carbon

Volumn 37, Issue 5, 1999, Pages 777-780

  Khan, R U A ^a   Burden, A P ^a   Silva, S R P ^a   Shannon, J M ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ENERGY GAP; FILM GROWTH; HARDNESS; HYDROGENATION; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX;

AMORPHOUS CARBON FILMS; TAUC OPTICAL BAND GAP;

CARBON;

EID: 0032658810     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(98)00269-3     Document Type: Article

References (11)

1. Street RA. Amorphous Hydrogenated Silicon. Cambridge University Press, 1991, Chapter 2.
2. Silva S.R.P., Amaratunga G.A.J., Constantinue C.P. J Appl Phys. 72:1992;1149.
3. Silva S.R.P., Robertson J., Amaratunga G.A.J.et al. J Appl Phys. 81:1997;2626.
4. Franceschini D.F., Achete C.A., Friere F.L. Appl Phys Lett. 60:1992;3229.
5. Kaufmann H., Metin S., Saperstein D.D. Phys Rev B. 39:1989;13053.
6. Koidl P., Wild C., Wagner J., Ramsteiner M. Mat Sci Forum. 52:1989;41.
7. Silva SRP, Khan RUA, Anguita JV, et al. Thin Solid Films (in press).
8. Barklie R.C., Collins M., Silva S.R.P. Diamond Relat Mater. 7:1998;864.
9. Penn D.R. Phys Rev. 128:1962;2093.
10. Frenkel J. Phys Rev. 54:1938;647.
11. Burden A.P., Mendoza E., Silva S.R.P., Amaratunga G.A.J. Diamond Relat Mater. 7:1998;495.