Optical dispersion analysis within the IR range of thermally grown and TEOS deposited SiO2 films

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 285-289

  Davazoglou, Dimitris ^a   Vamvakas, Vassilis Em ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OSCILLATORS (ELECTRONIC); SILICA; THERMAL EFFECTS;

OPTICAL DISPERSION ANALYSIS;

DIELECTRIC FILMS;

EID: 0032657332     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00217-0     Document Type: Article

References (20)

1. Sze SM, editor. VLSI Technology. New York: McGraw-Hill, 1988.
2. Pandelides S.T., Harrison W.A. Phys Rev. B13:1976;2667.
3. 2 System. Oxford: Elsevier, 1988. p. 77.
4. Konnert J.H., Karle J., Ferguson G.A. Science. 179:1973;177.
5. Konnert J., Appelman D.E. Acta Cryst. B34:1987;391.
6. Mozzi R.L., Warren B.E. J Appl Cryst. 2:1969;164.
7. Eernisse E.P., Derbenwick G.F. IEEE Trans Nucl Sci. N-23:1976;1534.
8. Eernisse E.P. Appl Phys Lett. 30:1977;290.
9. Revesz A.G. Phys Stat Sol (a). 57:1980;235.
10. Naiman L., Kirk C.T., Aucoin R.J., Terry F.L., Wyatt P.W., Senturia S.D. J Electrochem Soc. 131:1984;637.
11. Hrostowski H.J., Kaiser R.H. Phys Rev. 107:1957;966.
12. Philipp HR. Properties of silicon. INSPEC, The Institution of Electrical Engineers, EMIS Datareview, 1987. RN=16133. p. 1019.
13. Davazoglou D. Appl Phys Lett. 70:1997;246.
14. Davazoglou D. Thin Sol Films. 302:1997;204.
15. Davazoglou D., Vamvakas Em V., Vahlas C. J Electrochem Soc. 145:1998;1310.
16. Kirk T. Phys Rev B. 38:(2):1988;1255.
17. Vamvakas Em V., Davazoglou D., Vahlas C. Microelectron Reliab. 38:1998;265.
18. Hodgson JN. Optical Absorption and Dispersion in Solids, Ch. 1. London: Chapman and Hall, 1980.
19. Massoud H. Personal communication.
20. Scott J.F., Porto S.P. Phys Rev. 161:1967;903.