Improvement of electron emission characteristics of Si field emitter arrays by surface modification

Applied Surface Science

Volumn 146, Issue 1, 1999, Pages 172-176

  Ehara, Keigo ^b   Kanemaru, Seigo ^a   Matsukawa, Takashi ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Toyo Kohan Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON BEAMS; ELECTRON EMISSION; ETCHING; EVAPORATION; PHOTORESISTS; SEMICONDUCTING SILICON; SOLVENTS; SURFACE TREATMENT;

FIELD EMITTER ARRAYS (FEA);

ELECTRON SOURCES;

EID: 0032656056     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00020-3     Document Type: Article

References (5)

1. Itoh J. Appl. Surf. Sci. 111:1997;194.
2. Lee S., Ju B.K., Lee Y.H. J. Vac. Sci. Technol. B. 15(2):1997;425.
3. Liu J., Zhirnov V.V., Myers A.F., Wojak G.J., Choi W.B., Hren J.J., Wolter S.D., McClure M.J., Stoner B.R., Glass J.T. J. Vac. Sci. Technol. B. 13:1995;422.
4. Asano T., Sasaguri D., Shibata E., Higa K. Jpn. J. Appl. Phys. 36:1997;7749.
5. M. Makino, K. Ehara, T. Inoue, H. Yokoyama, S. Kanemaru, S. Yamamoto, J. Itoh, Ext. Abs. 2nd Int. Vac. Electron Sources Conf. (IVESC98), July 7-10, Tsukuba, 1998, p. 197.