Titanium carbide etching in high density plasma

Applied Surface Science

Volumn 148, Issue 1, 1999, Pages 1-8

  Hsiao, R ^a   Miller, D ^a   Nguyen, S ^a   Kellock, A ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPOSITION EFFECTS; ELECTRON SPECTROSCOPY; FLUORINE COMPOUNDS; FREE RADICALS; PLASMA DENSITY; PLASMA ETCHING; PRESSURE EFFECTS; REACTIVE ION ETCHING;

ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA); RESPONSE SURFACE METHOD;

TITANIUM CARBIDE;

EID: 0032655783     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00143-9     Document Type: Article

References (10)

1. Delplancke-Ogletree M., Monteiro O.R. J. Vac. Sci. Technol. A. 15(4):1997;1943. and references therein.
2. H. Gatzen, Data Storage, Sept. 1997, 85.
3. K. Bianchi, K. Jacqueline, R. Gdula, D. Lange, US Patent 4,601,782, 1986.
4. A. Hayes, J.F. Weldon, E. Ostran, R. Gambino, Data Storage, March 1995, 43.
5. Fukushima N., Katai H., Wada T., Horike Y. Jpn. Appl. Phys. 35:1996;2512.
6. Keller J.H., Forster J.C., Barnes M.S. J. Vac. Sci. Technol. A. 11:1993;2487.
7. E.K. Storms, Refractory Carbide, Vol. 2, Academic Press, New York, 1967, p. 1.
8. Kuo Y. Jpn. J. Appl. Phys. 1A:1993;179.
9. Astell-Burt P.J., Cairns J.A., Cheetham A.K., Hazel R.M. Plasma Chem. Plasma Process. 6:1986;419.
10. Kuo Y. ECS Ext. Abstr. 96(1):1995;282.