Experimental study on magnetoresistance phenomena in n-type Si/SiGe quantum wires

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 508-516

  Van Veen, R G ^a   Verbruggen, A H ^a   Van Der Drift, E ^a   Schaffler F ^b   Radelaar, S ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SHUBNIKOV-DE HAAS OSCILLATIONS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032655754     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/304     Document Type: Article

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