Chemical vs. physical factors in dry etching induced damage in the Si/GexSi1-x system

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 55-58

  Van Veen, R G ^a   Teepen, M J ^a   Van Der Drift, E ^a   Zijlstra, T ^a   Fakkeldij, E J M ^a   Werner, K ^a   Verbruggen, A H ^a   Radelaar, S ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; ION BOMBARDMENT; IONS; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WIRES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL FACTOR; DRY ETCHING INDUCED DAMAGE; LOW FIELD MAGNETOCONDUCTANCE MEASUREMENT; PHYSICAL FACTOR; SURFACE CHARGE; SURFACE TRAP;

PLASMA ETCHING;

EID: 0031074742     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00146-3     Document Type: Article

References (8)

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