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Volumn 9, Issue 2 PART 3, 1999, Pages 3198-3201

Fabrication technology for high-density josephson integrated circuits using mechanical polishing planarization

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; INTEGRATED CIRCUIT MANUFACTURE; POLISHING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; SPATIAL VARIABLES CONTROL; SPUTTERING;

EID: 0032655579     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783709     Document Type: Article
Times cited : (11)

References (7)
  • 1
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    • vol. 9, pp. A42-A45, 1996.
    • H. Numata, S. Nagasawa, and S. Tahara, "Fabrication technology for a high-density Josephson LSI using an electron cyclotron resonance etching technique and a bias-sputtering planarization", Supercond Sci. Technol, vol. 9, pp. A42-A45, 1996.
    • Supercond Sci. Technol
    • Numata, H.1    Nagasawa, S.2    Tahara, S.3
  • 2
    • 0031163332 scopus 로고    scopus 로고
    • "A vortex transitional memory cell for 1-Mbit/cm2 density Josephson RAMs"
    • vol. 7, pp. 2282-2287, June 1996.
    • H. Numata, S. Nagasawa, and S. Tahara, "A vortex transitional memory cell for 1-Mbit/cm2 density Josephson RAMs", IEEE. Trans, on ASC., vol. 7, pp. 2282-2287, June 1996.
    • IEEE. Trans, on ASC.
    • Numata, H.1    Nagasawa, S.2    Tahara, S.3
  • 3
    • 0000261231 scopus 로고    scopus 로고
    • S. Basavaiah. S. Brodsky, S. B. Kaplan, W. J. Gallagher, and M. Bhushan, "Sub-mm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology"
    • vol. 59, pp. 2609-2611, November 1991.
    • M. B. Ketchen, D. Pearson, A. W. Kleinsasser, C.-K. Hu, M. Smyth, J. Logan, K. Stawiasz, E. Baran, M. Jaso, T. ROSS, K. Petrillo, M. Manny, S. Basavaiah. S. Brodsky, S. B. Kaplan, W. J. Gallagher, and M. Bhushan, "Sub-mm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology", Appl. Phys. leu., vol. 59, pp. 2609-2611, November 1991.
    • Appl. Phys. Leu.
    • Ketchen, M.B.1    Pearson, D.2    Kleinsasser, A.W.3    Hu, C.-K.4    Smyth, M.5    Logan, J.6    Stawiasz, K.7    Baran, E.8    Jaso, M.9    Ross, T.10    Petrillo, K.11    Manny, M.12
  • 4
    • 33747715899 scopus 로고    scopus 로고
    • "A planarized process for low-Tc electronic applications"
    • 5th International Superconductive Electronics Conference, Nagoya, pp. 17-19, 1995.
    • M. Bhushan, Z. Bao, B. Bi, N. Kamp, K. Lin, A. Oliva, R. Rouse, Siyuan Han, and J. E. Lukens, "A planarized process for low-Tc electronic applications", Extended Abstracts of 5th International Superconductive Electronics Conference, Nagoya, pp. 17-19, 1995.
    • Extended Abstracts of
    • Bhushan, M.1    Bao, Z.2    Bi, B.3    Kamp, N.4    Lin, K.5    Oliva, A.6    Rouse, R.7    Han, S.8    Lukens, J.E.9
  • 5
    • 0028396766 scopus 로고    scopus 로고
    • "Miniaturized vortex transitional Josephson memory cell by a vertically integrated device structure"
    • vol. 4, pp. 19-24, Mar. 1994.
    • S. Nagasawa, S. Tahara, H. Numata, and S. Tsuchida, "Miniaturized vortex transitional Josephson memory cell by a vertically integrated device structure", IEEE Trans. Appl. Superconductivity, vol. 4, pp. 19-24, Mar. 1994.
    • IEEE Trans. Appl. Superconductivity
    • Nagasawa, S.1    Tahara, S.2    Numata, H.3    Tsuchida, S.4
  • 6
    • 0023419876 scopus 로고    scopus 로고
    • "A vortex transitional NDRO Josephson memory cell"
    • vol. 26, pp. 1463-1466, Sep. 1987.
    • S. Tahara and Y. Wada, "A vortex transitional NDRO Josephson memory cell", Japanese J. Appl. Phys., vol. 26, pp. 1463-1466, Sep. 1987.
    • Japanese J. Appl. Phys.
    • Tahara, S.1    Wada, Y.2
  • 7
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    • "Experimental vortex transitional nondestructive read-out Josephson memory cell"
    • vol. 65, no. 2, pp. 851-856, Jan. 1989.
    • S. Tahara, I. Ishida, Y. Ajisawa, and Y. Wada, "Experimental vortex transitional nondestructive read-out Josephson memory cell", J. Appl. Phys., vol. 65, no. 2, pp. 851-856, Jan. 1989.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.