Low-frequency noise in electrically stressed n-MOSFETs

Solid-State Electronics

Volumn 43, Issue 5, 1999, Pages 849-856

  Ren, L ^a   Okhonin, S ^a   Ilegems, M ^a  

^a Inst Micro Optoelectronics S   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; TRANSCONDUCTANCE;

CHARGE PUMPING METHODS;

MOSFET DEVICES;

EID: 0032654587     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00329-3     Document Type: Article

References (37)

1. Vandamme L.K.J. IEEE Trans. Electron. Dev. ED-41:1994;2176.
2. Fang Z.H., Christoloveanu S., Chovet A. IEEE Trans. Electron. Dev. Lett. EDL-7:1986;371.
3. Cheng C.H., Surya C. Solid-St. Electron. 36:1993;475.
4. Li X. Ph.D. dissertation, University of Technology, Eindhoven 1993.
5. Bauza D., Ghibaudo G. Microelectronic Engineering. 28:1995;325.
6. Hurley P.K., Sheehan E., Moran S., Mathewson A. Microelectron. Reliab. 36:1996;1679.
7. Pimbley J.M., Gildenblat G. IEEE Electron Dev. Lett. EDL-5:1984;345.
8. Maes H.E., Usmani S.H., Groeseneken G. J. Appl. Phys. 57:1985;4811.
9. Jayaraman R., Sodini C. IEEE Trans. Electron. Dev. ED-36:1989;1773.
10. Tsai M.H., Ma T.P. IEEE Electron. Dev. Lett. EDL-14:1993;256.
11. Ploor M.D., Schrimpf R.D., Galloway K.F., Johnson G.H. Appl. Phys. Lett. 67:1995;691-692.
12. Scofield J.H., Doerr T.P., Fleetwood D.M. IEEE Trans. Nucl. Sci. NS-36:1989;1946.
13. Meisenheimer T.L., Fleetwood D.M. IEEE Trans. Nucl. Sci. NS-37:1990;1696.
14. Fleetwood D.M., Scofield J.H. Phys. Rev. Lett. 64:1990;579.
15. Fleetwood D.M., Winokur P.S., Reber R.A. Jr., Meisenheimer T.L., Schwank J.R., Shaneyfelt M.R., Riewe L.C. J. Appl. Phys. 73:1993;5058.
16. Okhonin S., Hesseler T., Dutoit M. MEE Trans. Electron. Dev. ED-45:1996;605.
17. Dutoit M., Bouvet D., Mi J., Novkovski N., Letourneau P. Microelectron. J. 25:1994;539.
18. Scofield J.H., Borland N., Fleetwood D.M. IEEE Trans. Electron. Dev. ED-41:1994;1946.
19. Dimaria D.J., Arnold D., Cartier E. Appl. Phys. Lett. 60:1992;2118.
20. Heremans P., Witters J., Groeseneken G., Maes H.E. IEEE Trans. Electron. Dev. ED-36:1989;1318.
21. Chung L.E., Ko P.K., Hu C. IEEE Trans. Electron. Dev. ED-38:1991;1362.
22. Grove A.S., Fitzgerald D.J. Solid-St. Electron. 9:1966;783.
23. McWhorter P.J., Winokur P.S. Appl. Phys. Lett. 48:1986;133.
24. Hu C., Tam S.C., Hsu F.C., Ko P.K., Chan T.Y., Terrill K.W. IEEE Tran. Electron. Dev. ED-32:1985;375.
25. Raychaudhuri A., Deen M.J., Kwan W.S., King M.I.H. IEEE Trans. Electron. Dev. ED-43:1996;1114.
26. McWhorter A.L. Semiconductor Surface Physics. 1957;207-228 University of Pennsylvania Press, Philadelphia.
27. Reimbold G. IEEE Trans. Electron. Dev. ED-31:1984;1190.
28. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Trans. Electron. Dev. ED-37:1990;654.
29. Okhonin S, Clivaz P-A, Bouvet D, Pio F. submitted to IEEE Electron Dev. Lett.
30. Hofmann F. Proc. of ESSDERC90. 1990;583 IOP Publishing Ltd, Nottingham, England.
31. Dimaria D.I., Buchanan D.A., Stathis J.H., Stahlbush R.E. J. Appl. Phys. 77:1995;2032.
32. Dimaria D.I., Stathis J.H. J. Appl. Phys. 70:1991;1500.
33. Simoen E., Claeys C. Appl. Phys. Lett. 65:1994;1946.
34. Simoen E., Claeys C. IEEE Trans. Electron. Dev. ED-42:1995;1467.
35. Johnson M.J., Fleetwood D.M. Appl. Phys. Lett. 70:1997;1160.
36. Fleetwood D.M., Johnson M.J., Meisenheimer T.L., Winokur P.S., Warren W.L., Witczak S.C. IEEE Trans. Nucl. Sci. NS-44:1997;1810.
37. Vandamme L.K.J., Li X., Rigaud D. IEEE Trans. Electron. Dev. ED-41:1994;1936.