High-Speed Low-Noise InGaP/GaAs Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 16, Issue 12, 1995, Pages 540-541

  Fresina, M T ^a   Ahmari, D A ^a   Mares, P J ^a   Hartmann, Q J ^a   Feng, M ^a   Stillman, G E ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; CRYSTAL STRUCTURE; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE;

CUTOFF FREQUENCY; EMITTER FINGER DEVICE; MATERIAL QUALITY; MAXIMUM FREQUENCY OF OSCILLATION; SELF-ALIGNED BASE CONTACTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029508927     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.475580     Document Type: Article

References (9)

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