Preparation of light-emitting devices with poly(p-phenylenevinylene): Effects of thermal elimination conditions and polymer layer thickness on device performance

Synthetic Metals

Volumn 99, Issue 1, 1999, Pages 35-43

  Seoul, Chang ^a   Kang, Jae Ick ^a   Mah, Souk Il ^a   Lee, Chang Hee ^a  

^a Inha University   (South Korea)

Author keywords

Brightness; Degree of conversion; Electroluminescence; External quantum efficiency; Light emitting diode; Poly(p phenylene vinylene); Polymer; Precursor film; Thermal elimination conditions

Indexed keywords

ELECTROLUMINESCENCE; HEAT TREATMENT; INFRARED RADIATION; LIGHT MEASUREMENT; OPTICAL PROPERTIES; PLASTIC FILMS; QUANTUM EFFICIENCY; SEMICONDUCTING FILMS; SEMICONDUCTING POLYMERS; VINYL RESINS;

BRIGHTNESS; POLYPHENYLENEVINYLENE;

LIGHT EMITTING DIODES;

EID: 0032653005     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(98)00197-0     Document Type: Article

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