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Volumn 38, Issue 2 B, 1999, Pages 1060-1063
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Nanoscale ErP islands on InP(001) substrate grown by organometallic vapor-phase epitaxy
a
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Author keywords
Atomic force microscopy; Dislocations; ErP; InP; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Semimetal; Surface states
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Indexed keywords
ANISOTROPY;
ATOMIC FORCE MICROSCOPY;
DISLOCATIONS (CRYSTALS);
ERBIUM COMPOUNDS;
MORPHOLOGY;
ORGANOMETALLICS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
STRAIN;
TEMPERATURE;
VAPOR PHASE EPITAXY;
ANISOTROPIC STRAIN RELAXATION;
ATOMIC BONDS;
CURRENT IMAGING TUNNELING SPECTROSCOPY;
SEMIMETAL;
HETEROJUNCTIONS;
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EID: 0032651554
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.1060 Document Type: Article |
Times cited : (2)
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References (11)
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